Hot Carrier Reliability of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration
碩士 === 國立成功大學 === 微電子工程研究所 === 105 === In the thesis, we study the reliability analysis of different lightly doped drain (LDD) doping concentrations device, and mainly research the characteristics of the high voltage metal-oxide-semiconductor field effect transistor (HV-MOSFET) devices with differen...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/t695a6 |