Hot-Carrier Degradation of N-Type MOSFET under Various Bias Condition

碩士 === 國立成功大學 === 微電子工程研究所 === 105 === In the thesis, we mainly discuss the different stress bias condition and the hot carrier reliability induced by hot holes injection on the N-type conventional metal-oxide-semiconductor transistor. The experiment will enhance the hot holes injection and produce...

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Bibliographic Details
Main Authors: Shih-AnCheng, 鄭世安
Other Authors: Jone-Fang Chen
Format: Others
Language:en_US
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/zkrtvt