Analysis on Reliability for FinFET with Different Processes
碩士 === 國立成功大學 === 微電子工程研究所 === 106 === In this thesis, we investigated devices is advanced-FinFETs, and analysis on different high K oxide preheat time and different epitaxy proximity for basic electrical characteristics, N-type device hot carrier reliability and p-type device negative bias temperat...
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/sgp2g5 |