Effects of Different Processes on the Characteristics and Reliability of FinFET
碩士 === 國立成功大學 === 微電子工程研究所 === 107
Main Authors: | Chun-TingChen, 陳俊庭 |
---|---|
Other Authors: | Jone-Fang Chen |
Format: | Others |
Language: | en_US |
Published: |
2019
|
Online Access: | http://ndltd.ncl.edu.tw/handle/66d4z4 |
Similar Items
-
Analysis on Reliability for FinFET with Different Processes
by: Yu-HsuanLee, et al.
Published: (2018) -
Comparison of bulk FinFET and SOI FinFET
by: Chen Ying-Yu, et al.
Published: (2018-01-01) -
The Investigation of Characteristic and Reliability for FinFET with Different Device Dimension
by: Li-Kung Chin, et al.
Published: (2013) -
Reliability of extended fin width on FinFEts
by: Yu-Yen Ho, et al.
Published: (2015) -
Study on Reliability of P‐Channel FinFET Devices with Different Gate Process
by: Shao-an Chen, et al.
Published: (2015)