High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec--Part I: Material and Device Characterization, DC Performance, and Simulation

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec--Part I: Material and Device Characterization, DC Performance, and Simulation

Digital electronics power consumption evolved into a major concern: at the current pace, general-purpose computing energy consumption will exceed global energy production before 2045. The principal approach to curbing energy consumption in digital applications calls for ``steep-slope'' dev...

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Bibliographic Details
Main Authors: Arabhavi, A.M (Author), Bolognesi, C.R (Author), Bonomo, G. (Author), Han, D. (Author), Ostinelli, O.J.S (Author), Ruiz, D.C (Author)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2022
Subjects:
Atomic layer deposition
Atomic layer deposition (ALD)
Atomic-layer deposition
Computer circuits
Digital devices
Display devices
Drain current
Energy consumption
Energy utilization
Energy-consumption
Fabrication
GaInAs
Gallium alloys
HEMTs
High electron mobility transistors
III-V semiconductors
impact ionization
Impact ionization
Impact ionization MOSFET
impact ionization MOSFET (I-MOS)
Inverse subthreshold slope
inverse subthreshold slope (SS)
Inverse subthreshold slopes
Logic gates
MODFETs
MOS devices
MOSFET
MOS-FET
MOSFET devices
MOSFETs
RF performance
Semiconductor alloys
Steep slope
steep slope.
Steep slope.
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