In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride

In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride

Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum...

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Bibliographic Details
Main Authors: Albert, M. (Author), Bartha, J.W (Author), Killge, S. (Author), Knaut, M. (Author), Mikolajick, T. (Author), Reif, J. (Author)
Format: Article
Language:English
Published: AVS Science and Technology Society 2022
Subjects:
Alumina
Aluminum oxide
Aspect ratio
Atomic layer deposition
Atomic layer etching
Atomic-layer deposition
Atoms
Etch rates
Etching
Etching process
Fluorine compounds
Hafnium oxides
In-Situ Study
Oxide films
Photoelectrons
Photons
Process pressure
Semiconductor devices
Sequential reaction
Spectroscopic analysis
Spectroscopic ellipsometry
Surface reactions
Temperature distribution
Thin films
Thin-films
Trimethylaluminum
X ray photoelectron spectroscopy
X-ray photoelectrons
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