Conformal deposition of WS2 layered film by low-temperature metal-organic chemical vapor deposition

Large area multi-layer WS2 film has high potential as a channel material for MOSFETs in next-generation LSIs. State-of-the-art LSIs have complex three-dimensional (3D) structures such as vertical channels and multi-layer stacked channels surrounded by gate electrodes. To develop such structures, it...

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Bibliographic Details
Main Authors: Cho, K. (Author), Ishikawa, M. (Author), Machida, H. (Author), Ogura, A. (Author), Sawamoto, N. (Author), Sudoh, H. (Author), Wakabayashi, H. (Author), Yokogawa, R. (Author)
Format: Article
Language:English
Published: Institute of Physics 2023
Subjects:
WS2
Online Access:View Fulltext in Publisher