The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films
A comparison is made of the electrical effects of carbon in n and p type in situ doped polycrystalline Si1-yCy and Si0.82-ySi0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported.
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2001-12.
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| Subjects: | |
| Online Access: | Get fulltext |