1/f Noise and Generation/Recombination Noise in SiGe HBTs on SOI
A study is made of 1/f and generation/recombination (GR) noise in SOI SiGe HBTs fabricated using selective growth of the Si collector and non-selective growth of the SiGe base and n-type low doped Si emitter. A range of devices is studied in which different etch processes are used for the field oxid...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2005-07.
|
| Subjects: | |
| Online Access: | Get fulltext |