GSMBE growth and structural characterisation of SiGeC layers for HBT
Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The gro...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2005.
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| Subjects: | |
| Online Access: | Get fulltext |