Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications
This paper reports on detailed materials and electrical characterization of strain-compensated Si1?x?yGexCy layers synthesized by gas source molecular beam epitaxy (GSMBE). Materials assessment included the application of spectroscopic ellipsometry (SE), x-ray diffraction (XRD) and high-resolution c...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
2005.
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Subjects: | |
Online Access: | Get fulltext |