Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications
This paper reports on detailed materials and electrical characterization of strain-compensated Si1?x?yGexCy layers synthesized by gas source molecular beam epitaxy (GSMBE). Materials assessment included the application of spectroscopic ellipsometry (SE), x-ray diffraction (XRD) and high-resolution c...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2005.
|
| Subjects: | |
| Online Access: | Get fulltext |