Improved sub-threshold slope in short channel vertical MOSFETs using FILOX oxidation
This paper investigates the origins of sub-threshold slope degradation in vertical MOSFETs (v-MOSFETs) due to dry etching of the polysilicon surround gate. Control v-MOSFETs exhibit a degradation of sub-threshold slope as the channel length is reduced from 250 to 100 nm, with 100 nm transistors havi...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2009-07.
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| Subjects: | |
| Online Access: | Get fulltext |