Search Results - Ben Kaczer
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On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET by Md. Nur Kutubul Alam, Ben Kaczer, Lars-Ake Ragnarsson, Mihaela Popovici, Gerhard Rzepa, Naoto Horiguchi, Marc Heyns, Jan Van Houdt
Published in IEEE Journal of the Electron Devices Society (2019-01-01)Get full text
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Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors by Amine Slassi, Linda‐Sheila Medondjio, Andrea Padovani, Francesco Tavanti, Xu He, Sergiu Clima, Daniele Garbin, Ben Kaczer, Luca Larcher, Pablo Ordejón, Arrigo Calzolari
Published in Advanced Electronic Materials (2023-04-01)Get full text
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Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range by Stanislav Tyaginov, Erik Bury, Alexander Grill, Zhuoqing Yu, Alexander Makarov, An De Keersgieter, Mikhail Vexler, Michiel Vandemaele, Runsheng Wang, Alessio Spessot, Adrian Chasin, Ben Kaczer
Published in Micromachines (2023-10-01)Get full text
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A Pragmatic Model to Predict Future Device Aging by James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jian Fu Zhang
Published in IEEE Access (2023-01-01)Get full text
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Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories by Sivaramakrishnan Ramesh, Arjun Ajaykumar, Lars-Åke Ragnarsson, Laurent Breuil, Gabriel Khalil El Hajjam, Ben Kaczer, Attilio Belmonte, Laura Nyns, Jean-Philippe Soulié, Geert Van den bosch, Maarten Rosmeulen
Published in Micromachines (2021-09-01)Get full text
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Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs by Stanislav Tyaginov, Barry O’Sullivan, Adrian Chasin, Yaksh Rawal, Thomas Chiarella, Camila Toledo de Carvalho Cavalcante, Yosuke Kimura, Michiel Vandemaele, Romain Ritzenthaler, Jerome Mitard, Senthil Vadakupudhu Palayam, Jason Reifsnider, Ben Kaczer
Published in Micromachines (2023-07-01)Get full text
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Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs by Luca Panarella, Ben Kaczer, Quentin Smets, Stanislav Tyaginov, Pablo Saraza Canflanca, Andrea Vici, Devin Verreck, Tom Schram, Dennis Lin, Theresia Knobloch, Tibor Grasser, César Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev
Published in npj 2D Materials and Applications (2024-07-01)Get full text
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