Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the existence of an active defect in the gate oxide, located very clos...

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Bibliographic Details
Main Authors: Peyush Pande, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Philip Tanner, Jisheng Han
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
4H-SiC MOSFET
N-type SiC MOS capacitor
gate oxide
near-interface traps
trap measurement
Online Access:https://ieeexplore.ieee.org/document/8332471/

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https://ieeexplore.ieee.org/document/8332471/

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