Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C incl...

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Bibliographic Details
Main Authors: Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura
Format: Article
Language:English
Published: MDPI AG 2014-10-01
Series:Materials
Subjects:
silicon carbide
epitaxial growth
low off-angle
3C inclusion
in situ etching
C/Si ratio
Online Access:http://www.mdpi.com/1996-1944/7/10/7010

Internet

http://www.mdpi.com/1996-1944/7/10/7010

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