Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

This paper demonstrates the compensation of the intrinsic positive charges in Al₂O₃ gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomi...

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Bibliographic Details
Main Authors: Zhang, Yuhao (Contributor), Sun, Min (Contributor), Jayanta Joglekar, Sameer (Contributor), Fujishima, Tatsuya (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2018-06-06T19:28:13Z.
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