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|a Zhang, Yuhao
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
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|a Massachusetts Institute of Technology. Microsystems Technology Laboratories
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|a Zhang, Yuhao
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|a Zhang, Yuhao
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|a Sun, Min
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|a Jayanta Joglekar, Sameer
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|a Fujishima, Tatsuya
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|a Palacios, Tomas
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|a Sun, Min
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|a Jayanta Joglekar, Sameer
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|a Fujishima, Tatsuya
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|a Palacios, Tomas
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|a Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
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|b American Institute of Physics (AIP),
|c 2018-06-06T19:28:13Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/116161
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|a This paper demonstrates the compensation of the intrinsic positive charges in Al₂O₃ gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomic layer deposition compensate the intrinsic positive charge present in the Al₂O₃. This compensation is key to control the threshold voltage (Vth) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the V[subscript th] of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. Using the proposed charge compensation, the V[subscript th] increases with gate dielectric thickness, exceeding 3.5V for gate dielectrics 25 nm thick.
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|a en_US
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|a Article
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|t Applied Physics Letters
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