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7“...High Breakdown ( > 1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology...”
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10by Liu, Zhihong, Gao, Xiang, Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hu, Jie, Palacios, TomasGet fulltext
Published 2018
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13by Hu, Jie, Zhang, Yuhao, Sun, Min, Piedra, Daniel, Chowdhury, Nadim, Palacios, TomasGet fulltext
Published 2019
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